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24 GHz low-noise amplifier in 0.18-μm CMOS technology
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A 1 V 51 GHz fully-integrated VCO in 0.12-μm CMOS
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San Francisco, CA
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A 63-GHz VCO using a standard 0.25-μm CMOS process
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San Francisco, CA
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R. C. Liu, H. Y. Chang, C. H. Wang, and H. Wang, "A 63-GHz VCO using a standard 0.25-μm CMOS process," in IEEE Int. Solid-State Circuits Conf. Dig, San Francisco, CA, 2004, pp. 446-447.
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Liu, R.C.1
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2442671951
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A 40 Gb/s CMOS distributed amplifier for fiber-optic communication systems
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San Francisco, CA
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H. Shigematsu, M. Sato, T. Hirose, F. Brewer, and M. Rodwell, "A 40 Gb/s CMOS distributed amplifier for fiber-optic communication systems," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, 2004, pp. 476-477.
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0028743279
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DC to 38-GHz distributed analog multiplier using InP HEMTs
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Dec.
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A DC-20-GHz InP HBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver application
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Feb.
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K. W. Kobayashi, R. M. Desrosiers, A. K. Oki, and D. C. Streit, "A DC-20-GHz InP HBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver application," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 194-202, Feb. 2000.
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7
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0036067877
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40 GHz monolithic integrated mixer in SiGe bipolar technology
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Seattle, WA
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S. Hackl, J. Bock, M. Wurzer, and A. L. Scholtz, "40 GHz monolithic integrated mixer in SiGe bipolar technology," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, Seattle, WA, 2002, pp. 1241-1244.
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0038004084
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DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
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A 0.1-8 GHz ultra-wideband high performance mixer for low power applications
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C. H. Tay, K. S. Yeo, J. G. Ma, and M. A. Do, "A 0.1-8 GHz ultra-wideband high performance mixer for low power applications," in Proc. IEEE Asia-Pacific Microwave Conf., Nov. 2003, pp. 420-422.
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Tay, C.H.1
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0035120933
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Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology
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12
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0002826013
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30 GHz active mixer in Si/SiGe bipolar technology
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Dec.
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M. Wurzer, T. F. Meister, S. Hackl, H. Knapp, and L. Treitinger, "30 GHz active mixer in Si/SiGe bipolar technology," in Proc. IEEE Asia-Pacific Microwave Conf., Dec. 2000, pp. 780-782.
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13
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4444233855
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A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique
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Fort Worth, TX, June
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M. D. Tsai, C. S. Lin, C. H. Wang, C. H. Lien, and H. Wang, "A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation- compensation technique," in Proc. IEEE Radio Frequency Integrated Circuits Symp., Fort Worth, TX, June 2004.
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Tsai, M.D.1
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15
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0035689536
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A 0.18-μm foundry RF CMOS technology with 70-GHz ft for single chip system solutions
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H. M. Hsu, J. Y. Chang, J. G. Su, C. C. Tsai, S. C. Wong, C. W. Chen, K. R. Peng, S. P. Ma, C. H. Chen, T. H. Yeh, C. H. Lin, Y. C. Sun, and C. Y. Chang, "A 0.18-μm foundry RF CMOS technology with 70-GHz ft for single chip system solutions," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, 2001, pp. 1869-1872.
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