High external quantum efficiency from double heterostructure InGaP/GaAs layers as selective emitters for thermophotonic systems

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1268-1272

  Lin, K L ^a   Catchpole, K R ^a   Campbell, P ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROLUMINESCENCE; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; PHOTOVOLTAIC CELLS; REACTION KINETICS;

BANDGAP; LIGHT EXTRACTION; THERMOPHOTONICS;

QUANTUM EFFICIENCY;

EID: 9144256866     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/010     Document Type: Article

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