-
1
-
-
9144242453
-
-
Cambridge, UK: Cambridge Univ. Press, ch. 6
-
V. Ramaswamy et al., Intergovernmental Panel on Climate Change, Climate Change 2001: The Scientific Basis, Cambridge, UK: Cambridge Univ. Press, 2001, ch. 6, p. 389.
-
(2001)
Intergovernmental Panel on Climate Change, Climate Change 2001: The Scientific Basis
, pp. 389
-
-
Ramaswamy, V.1
-
2
-
-
6744231365
-
Plasma abatement reduces PFC emission
-
June
-
V. H. Vartanian, L. S. Beu, T. Lii, E. J. Tonnis, D. Graves, R. Jewett, W. Wofford, J. W. Bevan, C. L. Hartz, and M. Gunn, "Plasma abatement reduces PFC emission," Semiconduct. Int., vol. 23, pp. 191-198, June 2000.
-
(2000)
Semiconduct. Int.
, vol.23
, pp. 191-198
-
-
Vartanian, V.H.1
Beu, L.S.2
Lii, T.3
Tonnis, E.J.4
Graves, D.5
Jewett, R.6
Wofford, W.7
Bevan, J.W.8
Hartz, C.L.9
Gunn, M.10
-
3
-
-
0034155988
-
2O
-
Mar./Apr.
-
2O," J. Vac. Sci. Technol., A, vol. 18, no. 2, pp. 393-400, Mar./Apr. 2000.
-
(2000)
J. Vac. Sci. Technol., A
, vol.18
, Issue.2
, pp. 393-400
-
-
Tonnis, E.J.1
Graves, D.2
Jewett, R.3
Vartanian, V.H.4
Beu, L.S.5
Stephens, T.6
Lii, T.7
-
4
-
-
9144234101
-
Current status of surface wave plasma abatement of semiconductor global warming emissions
-
B. A. Wofford and J. W. Bevan, "Current status of surface wave plasma abatement of semiconductor global warming emissions," Fut. Fab. Int., vol. 11, pp. 89-96, 2001.
-
(2001)
Fut. Fab. Int.
, vol.11
, pp. 89-96
-
-
Wofford, B.A.1
Bevan, J.W.2
-
5
-
-
9144240434
-
Using point-of-use plasma sources to shape a Fab's environmental footprint
-
Mar.
-
R. Jewett and E. J. Tonnis, "Using point-of-use plasma sources to shape a Fab's environmental footprint," Semiconduct. FabTech., vol. 13, pp. 113-116, Mar. 2001.
-
(2001)
Semiconduct. FabTech.
, vol.13
, pp. 113-116
-
-
Jewett, R.1
Tonnis, E.J.2
-
6
-
-
9144265471
-
Control of PFC emissions from plasma processes by reactive gas addition
-
Oct. 14
-
V. Vartanian, B. J. Goolsby, R. Chatterjee, R. Reif, and E. J. Tonnis, "Control of PFC emissions from plasma processes by reactive gas addition," in SEMICON Southwest 2002, Oct. 14, 2002.
-
(2002)
SEMICON Southwest 2002
-
-
Vartanian, V.1
Goolsby, B.J.2
Chatterjee, R.3
Reif, R.4
Tonnis, E.J.5
-
7
-
-
0018441483
-
Plasma etching - A discussion of mechanisms
-
Mar./Apr.
-
J. W. Coburn and H. F. Winters, "Plasma etching - A discussion of mechanisms," J. Vac. Sci. Technol., vol. 16, no. 2, pp. 391-403, Mar./Apr. 1979.
-
(1979)
J. Vac. Sci. Technol.
, vol.16
, Issue.2
, pp. 391-403
-
-
Coburn, J.W.1
Winters, H.F.2
-
8
-
-
9144235450
-
Plasma-assisted etching
-
J. W. Coburn, "Plasma-assisted etching," Plasma Chemistry and Plasma Processing, vol. 1, no. 4, pp. 317-363, 1981.
-
(1981)
Plasma Chemistry and Plasma Processing
, vol.1
, Issue.4
, pp. 317-363
-
-
Coburn, J.W.1
-
9
-
-
0021482134
-
4 plasma etching
-
4 plasma etching," J. Electrochem. Soc., vol. 131, no. 8, pp. 1926-1931, 1984.
-
(1984)
J. Electrochem. Soc.
, vol.131
, Issue.8
, pp. 1926-1931
-
-
Bernacki, S.E.1
Kosicki, B.B.2
-
10
-
-
0020909662
-
Application of EPR spectroscopy to oxidative removal of organic materials
-
J. M. Cook and B. W. Benson, "Application of EPR spectroscopy to oxidative removal of organic materials," J. Electrochem. Soc., vol. 130, no. 12, pp. 2459-2464, 1983.
-
(1983)
J. Electrochem. Soc.
, vol.130
, Issue.12
, pp. 2459-2464
-
-
Cook, J.M.1
Benson, B.W.2
-
11
-
-
33645043079
-
-
London, U.K.: Academic, ch. 2
-
D. M. Manos and D. L. Flamm, Eds., Plasma Etching, an Introduction. London, U.K.: Academic, 1989, ch. 2, pp. 168-169.
-
(1989)
Plasma Etching, An Introduction
, pp. 168-169
-
-
Manos, D.M.1
Flamm, D.L.2
-
12
-
-
0041311127
-
Analyzing available alternatives for point-of-use abatement techniques
-
July
-
B. J. Goolsby, V. H. Vartanian, and L. Mendicino, "Analyzing available alternatives for point-of-use abatement techniques," Solid State Technology, pp. 132-136, July 2003.
-
(2003)
Solid State Technology
, pp. 132-136
-
-
Goolsby, B.J.1
Vartanian, V.H.2
Mendicino, L.3
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