A fully integrated 24-dBm CMOS power amplifier for 802.11a WLAN applications

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 11, 2004, Pages 504-506

  Eo, YunSeong ^a   Lee, KwangDu ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Complementery metal oxide semiconductor (CMOS) analog integrated circuit; Power amplifier (PA); WLAN

Indexed keywords

AMPLITUDE MODULATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA COMMUNICATION EQUIPMENT; FREQUENCY DIVISION MULTIPLEXING; LOCAL AREA NETWORKS; NONLINEAR SYSTEMS; PYROLYSIS; TRANSISTORS;

ANALOG INTEGRATED CIRCUITS; PEAK TO AVERAGE RATIO (PAR); WIRELESS LOCAL AREA NETWORK (WLAN);

POWER AMPLIFIERS;

EID: 9144247888     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.837080     Document Type: Article

References (4)

1. B. McFarland et al., "A 2.4 & 5 GHz dual band 802.11 WLAN supporting data rates to 108 Mb/s," in IEEE Gallium Arsenide Integrated Circuit Symp. Dig., Oct. 2002, pp. 11-14.
2. D. Su et al., "A 5-GHz CMOS transceiver for IEEE802.11a wireless LAN," in IEEE Int. Solid-State Circuits Conf. Tech. Dig. Tech., Feb. 2002, pp. 92-93.
3. A. Behzad et al., "Direct-conversion CMOS transceiver with automatic frequency control for 802.11 a wireless LANs," in IEEE Int. Solid-State Circuits Conf. Tech. Dig. Tech., Feb. 2003, pp. 356-357.
4. S. Shinjo, M. Ono, H. Ueda, A. Furukawa, T. Ohnakado, Y. Hashizume, and N. Suematsu, "Si-CMOS complementary push-pull amplifier with single supply voltage," in Proc. Inst. Electronics, Information Communication Engineers Soc. Conf., vol. C-I, 2001.