High-resolution imaging of recording marks on phase-change film by lateral force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 6356-6357

  Ishiyama, Osamu ^a  

^a Matsushita Technoresearch Inc   (Japan)

Author keywords

Ge Sb Te; Kelvin force microscopy; Lateral force microscopy; Phase change; Recording mark; Scanning probe microscopy

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; FRICTION; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; OPTICAL RESOLVING POWER; RESONANCE;

KELVIN FORCE MICROSCOPY; LATERAL FORCE MICROSCOPY; PHASE CHANGE; RECORDING MARKS; SCANNING PROBE MICROSCOPY;

OPTICAL RECORDING;

EID: 9144246511     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6356     Document Type: Article

References (6)

1. Kelvin force microscopy is sometimes referred to as surface potential microscopy (SPoM).
2. H. Namita, Y. Nakahara, R. Ookuma, M. Kubo and M. Horie: Proc. 11th Symp, Phase Change Optical Information Storage (The Society of Phase Change Recording, Shizuoka, 1999) p. 52.
3. E. Mizoguchi, T. Kouzaki, T. Nishihara and R. Kojima: Proc. 14th Symp. Phase Change Optical Information Storage (The Society of Phase Change Recording, Shizuoka, 2002) p. 52.
4. T. Todokoro, T. Saiki, K. Yusu and K. Ichihara: Jpn. J. Appl. Phys. 39 (2000) 3599.
5. M. Yamaguchi, Y. Sasaki, H. Sasaki, T. Konada, A. Ebina, T. Umezawa and T. Horiguchi: Jpn. J. Appl. Phys. 40 (2001) 1578.
6. M. Kitazawa and A. Toda: Jpn. J. Appl. Phys. 41 (2002) 4928.