Mechanical polishing technique for carbon nanotube interconnects in ULSIs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 6499-6502

  Horibe, Masahiro ^a   Nihei, Mizuhisa ^a   Kondo, Daiyu ^a   Kawabata, Akio ^a   Awano, Yuji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Diamond particles; Future ultralarge scale integrated (ULSI) circuits; Interconnects; Mechanical polishing technique; Multiwalled carbon nanotube (MWNT)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURRENT DENSITY; DIAMONDS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; POLISHING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

DIAMOND PARTICLES; INTERCONNECTS; MECHANICAL POLISHING TECHNIQUE; MULTIWALLED CARBON NANOTUBES (MWCN);

CARBON NANOTUBES;

EID: 9144222878     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6499     Document Type: Article

References (10)

1. International Technology Roadmap for Semiconductors (ITRS2003) (Semiconductor Industry Association, San Jose, CA, 2003).
2. Z. Yao, C. L. Kane and C. Dekker: Phys. Rev. Lett. 84 (2000) 2941.
3. P. Kim, L. Shi, A. Majumdar and P. L. McEuen: Phys. Rev. Lett. 87 (2001) 215502.
4. R. S. Ruoff, D. Qian and W. K. Liu: C. R. Physique 4 (2003) 993.
5. W. Hoenlein: Proc. Int. Microprocesses and Nanotechnology Conf. 2001 (2001) p. 76.
6. J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Stevens, J. Han and M. Meyyappan: Appl. Phys. Lett. 82 (2003) 2491.
7. F. Kreupl, A. P. Graham, G. S. Duesberg, W. Steinhgl, M. Liebau and E. Unger: Microelectron. Eng. 64 (2002) 399.
8. M. Nihei, A. Kawabata and Y. Awano: Ext. Abstr. Int. Conf. Science and Application of Nanotubes (NT02), Boston, MA (2002) p. Su-PS3-Sy71.
9. M. Nihei, M. Horibe, A. Kawabata and Y. Awano: Jpn. J. Appl. Phys. 43 (2004) 1856.
10. S. Kondo: Ext. Abstr. Int. Interconnect Technology Conf. 2003 (IITC2003), San Francisco, CA (2003) p. 86.