SCOPUS 정보 검색 플랫폼

35th Intersociety Energy Conversion Engineering Conference and Exhibit

Volumn , Issue , 2000, Pages 174-179

Comparison of 1200V silicon carbide schottky diodes and silicon power diodes

(4) Chang, H R a Gupta, R N a Winterhalter, C a Hanna, E a

a ROCKWELL SCIENCE CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC DRIVES; ENERGY CONVERSION; LEAKAGE CURRENTS; MILITARY APPLICATIONS; POWER SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TRUCKS; ELECTRIC POTENTIAL;

COMMERCIAL MOTORS; DYNAMIC CHARACTERIZATION; FORWARD VOLTAGE DROPS; LOW-LEAKAGE CURRENT; REVERSE RECOVERY CHARGE; SIC SCHOTTKY DIODE; SILICON CARBIDE SCHOTTKY DIODES; SILICON POWER DIODE;

SCHOTTKY BARRIER DIODES;

FREEWHEELING DIODE; SILICON CARBIDE SCOTTKY DIODES; VOLTAGE DROP;

EID: 84894297596 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.2514/6.2000-2828 Document Type: Conference Paper

Times cited : (18)

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