Processing induced material interactions determining the reliability of LTCC multichip modules

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 339-345

  Harsányi, Gábor ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CHEMICAL BONDS; DEPOSITION; ELECTROCHEMISTRY; ELECTROLYTES; FAILURE ANALYSIS; METALLIZING; SHORT CIRCUIT CURRENTS;

ELECTROCHEMICAL MIGRATION;

MULTICHIP MODULES;

EID: 8744310708     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00207-3     Document Type: Article

References (19)

1. Kohman GT, Hermance HW, Dowries GH. Silver migration in electrical insulation. Bell System Technical Journal 1955;34:1115-47.
2. Shumka A, Piety RR. Migrated-gold resistive shorts in microcircuits. In: Proc. Int. Reliability Physics Symp. 1975. p. 93-8.
3. Benson RC, Romenesko BM, Weiner JA, Nail BH, Charles Jr HK. Metal electromigration induced by solder flux residue in hybrid microcircuits. IEEE Trans Comp, Hybrids, Manuf Technol 1988;CHMT-10:363-70.
4. DerMarderosian A. The electrochemical migration of metals. In: Proc. Int. Society of Hybrid Microelectronics. 1978. p. 134-6.
5. Ripka G, Harsányi G. Electrochemical migration in thick-film ICs. Electrocomp Sci Technol 1985;11:281-90.
6. Coleman MV, Winster AE. Silver migration in thick-film conductors and chip attachment resins. Microelectronics Journal 1981;4:23-9.
7. Harsányi G. Dendritic growth from dielectric constituents: a newly discovered failure mechanism in thick-film ICs. Int J Microcircuits and Electronic Packaging 1993;16(3):207-16.
8. Harsányi G. New type short circuits at fritless thick-film conductors - formed from reduced oxides. In: Proc. Intern. Symp. on Microelectronics, ISHM. 1992. p. 140-3.
9. Harsányi G. Electrochemical processes resulting in migrated short failures in microcircuits. IEEE Trans Components Packaging, and Manufacturing Technology, Part A 1995;18(3):602-10.
10. Krumbein SJ. Metallic electromigration phenomena. In: Christou A, editor. Electromigration and electronic device degradation. New York: Wiley, 1994. p. 139-66.
11. Sbar NL, Kozakiewicz RP. New acceleration factors for temperature, humidity, bias testing. IEEE Trans Electron Devices 1979;ED-26(1):56-71.
12. Peck S, Trapp O. Accelerated testing handbook. Portola Valley, CA: Technology Associates, 1989.
13. 3-based buried thick film capacitor materials sets, 1200 < K < 1600. In: Proceedings of the Int. Conf. on Multichip Modules and High Density Packaging. 1998. p. 484-9.
14. Hoffman LC, Nakamaya T. Screen printed capacitor dielectrics. Microelectronics and Reliability, 1968;131-135.
15. Ogawa T, Ootani M, Asai T, Hasegawa M, Ito O. Effect of inorganic binders on the properties of thick-film copper conductor. IEEE Trans Components Packaging, and Manufacturing Technology, Part A 1994;17(4):625-30.
16. Harsányi G. Illyefalvi-Vitéz Zs, Jones WK. Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems. In: Proceedings of the 46th Electronic Components and Technology Conference (IEEE-CPMT), Orlando. 1996. p. 765-71.
17. Levin EM, Robbins CR, McMurdie HC. editors, Phase diagrams for ceramists, National Bureau of Standards. The American Ceramist Society, 1964.
18. Horowitz SJ, Felten JJ, Gerry J, Larry JR, Rosenberg RM. Recent developments in gold conductor bonding performance and failure mechanisms, solid state technology, March, 1979, pp. 37-51.
19. Illyefalvi-Vitéz Zs. Laser processing in MCM-C Technologies MCM-C/Mixed technologies and thick film sensors, Jones WK et al. editors, NATO ASI Series, 3. High technology, vol. 2, 1995, pp. 69-78.