3C-SiC growth on 6H-SiC (0001) substrates

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 315-318

  Matko, I ^a   Chenevier, B ^a   Audier, M ^a   Madar, R ^a   Diani, M ^b   Simon, L ^c   Kubler, L ^c   Aubel, D ^c  

^a Grenoble INP Phelma   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

^c UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Electron diffraction; Electron microscopy; Heteropolytypic growth; MBE; SiC; Twinning; X ray photoelectron diffraction; X ray photoelectron spectroscopy

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; CARBONIZATION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRONS; PHOTONS; TWINNING;

HETEROPOLYTYPIC GROWTH; X-RAY PHOTOELECTRON DIFFRACTION; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; CUBIC STRUCTURE; EPITAXY RELATIONSHIPS; HEXAGONAL STRUCTURES; HIGH RESOLUTION IMAGE; MONOLAYER DEPOSITION; X RAY PHOTO-ELECTRON DIFFRACTION; [110] DIRECTION;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 8744267683     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.315     Document Type: Article

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