Principles of solar cell operation

Solar Cells: Materials Manufacture and Operation

Volumn , Issue , 2005, Pages 5-27

  Markvart, Tom ^a   Castañer, Luis ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85134096418     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-185617457-2/50002-0     Document Type: Chapter

References (33)

1. Sze S.M. Physics of Semiconductor Devices 1981, John Wiley & Sons, New York. 2nd edition.
2. Hishikawa Y., Imura Y., Oshiro T. Irradiance dependence and translation of the I-V characteristics of crystalline silicon solar cells. Proc. 28th IEEE Photovoltaic Specialists Conf. 2000, 1464-1467.
3. 2-based solar cells using I-V measurements made at different light intensities. Proc. 26th IEEE Photovoltaic Specialist Conf. 1997, 463-466.
4. Hegedus S.S. Current-voltage analysis of a-Si and a-SiGe solar cells including voltage-dependent photocurrent collection. Prog. Photovolt: Res. Appl. 1997, Vol. 5:151-168.
5. Green M.A. Silicon Solar Cells: Advanced Principles and Practice 1995, Centre for Photovoltaic Devices and Systems, University of New South Wales.
6. Castañer L., Silvestre S. Modelling Photovoltaic Systems Using Pspice 2002, 2002, John Wiley & Sons, Chichester.
7. Born M., Wolf E. Principles of Optics 1999, Cambridge University Press, Cambridge, Section 1.6. 7th edition.
8. Brendel R., Queisser H.J. On the thickness dependence of open circuit voltages of p-n junction solar cells. Sol. Energy Mater. Sol. Cells 1993, Vol. 29:397.
9. Markvart T. Light harvesting for quantum solar energy conversion. Prog. Quantum Electronics 2000, Vol. 24:107.
10. Yablonovich E. Statistical ray optics. J. Opt Soc. Am. 1982, Vol. 72:899.
11. Yablonovich E., Cody G.C. Intensity enhancement in textured optical sheets for solar cells. IEEE Trans. Electron Devices 1982, Vol. ED-29:300.
12. Miñano J.C. Optical confinement in photovoltaics. Physical Limitations to Photovoltaic Energy Conversion 1990, 50. Adam Hilger, Bristol. A. Luque, G.L. Araujo (Eds.).
13. Schropp R., Zeman M. Amorphous and Microcystalline Silicon Solar Cells: Modelling, Materials and Device Technology 1998, Kluwer, Boston.
14. Selberherr S. Analysis and Simulation of Semiconductors Devices 1984, 1984, pp. 141-146, Springer, Vienna, New York.
15. Sah C.T., Noyce R.N., Shockley W. Carrier generation and recombination in p-n junctions and p-n junction characteristics. Proc. IRE 1957, Vol. 45:1228.
16. Rover D.T., Basore P.A., Thorson G.M. Proc. 18th IEEE Photovoltaic Specialist Conf. 1985, 703-709.
17. Cuevas A., Balbuena M. Review of analytical models for the study of highly doped regions of silicon devices. IEEE Trans. Electron Devices 1989, Vol. ED-31:553-560.
18. Shibib M.A., Lindholm F.A., Therez F. IEEE Trans. Electron Devices 1978, Vol. ED-26:958.
19. th IEEE Photovoltaic Specialist Conf. 1984, 1303-1308.
20. Park J.S., Neugroschel A., Lindholm F.A. IEEE Trans. Electron Devices 1986, Vol. ED-33:240.
21. Rinaldi N. Modelling of minority carrier transport in non-uniformly doped silicon regions with asymptotic expansions. IEEE Trans. Electron Devices 1993, Vol. ED-40:2307-2317.
22. Alcubilla R., Pons J., Castañer L. Superposition solution for minority carrier current in the emitter of bipolar devices. Solid State Electronics 1992, Vol. 35:529-533.
23. Cuevas A., Merchan R., Ramos J.C. On the systematic analytical solutions for minority carrier transport in non-uniform doped semiconductors: application to solar cells. IEEE Trans. Electron Devices 1993, Vol. ED-40:1181-1183.
24. del Alamo J.A., Swanson R.M. The physics and modelling of heavily doped emitters. IEEE Trans. Electron Devices 1984, Vol. ED-31:1878.
25. Bisschop F.J., Verhoef L.A., Sinke W.C. An analytical solution for the collection efficiency of solar cell emitters with arbitrary doping profile. IEEE Trans. Electron Devices 1990, Vol. ED-37:358-364.
26. Brillson L.J. Surfaces and interfaces: atomic-scale structure, band bending and band offsets. Handbook of Semiconductors 1992, Vol. 1:281-417. Elsevier. P.T. Landsberg (Ed.).
27. Anderson R.L. Experiments on Ge-As heterojunctions. Solid State Electronics 1962, Vol. 5:341-351.
28. Kroemer H. Heterostructure devices: a device physicist looks at interfaces. Surface Science 1983, Vol. 132:543-576.
29. Crandall R.S. Modelling of thin film solar cells: uniform field approximation. J. Appl. Phys. 1983, Vol. 54:7176.
30. Hubin J., Shah A.V. Effect of the recombination function on the collection in a p-i-n solar cell. Phil. Mag. 1995, Vol. B72:589.
31. Zweibel K., Hersch P. Basic Photovoltaic Principles and Methods 1984, Van Nostrand Reinhold, New York.
32. Overstraeten R., van Mertens R.P. Physics, Technology and Use of Photovoltaics 1986, Adam Hilger, Bristol.
33. Goetzberger A., Knobloch J., Voss B. Crystalline Silicon Solar Cells 1998, John Wiley & Sons, Chichester.