Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic L10-FePt electrodes

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 2, 2008, Pages 2573-2576

  Yoshikawa, Masatoshi ^a   Kitagawa, Eiji ^a   Nagase, Toshihiko ^a   Daibou, Tadaomi ^a   Nagamine, Makoto ^a   Nishiyama, Katsuya ^a   Kishi, Tatsuya ^a   Yoda, Hiroaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Interfacial layer; L10 FePt electrodes; Magnetic tunnel junction; MgO barrier; Perpendicular magnetic anisotropy

Indexed keywords

ELECTRODES; IRON; IRON COMPOUNDS; LATTICE MISMATCH; MAGNESIA; MAGNETIC ANISOTROPY; OXIDE MINERALS; PLATINUM COMPOUNDS; TEXTURES; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

INTERFACIAL LAYER; L10-FEPT; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; PERPENDICULAR MAGNETIC ANISOTROPY;

MAGNETIC DEVICES;

EID: 85130081604     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2003059     Document Type: Article

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