FIB Micro-pillar sampling of Si devices and its 3D observation

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 2003-November, Issue , 2003, Pages 282-287

  Yaguchi, T ^a   Kamino, T ^a   Ohnishi, T ^b   Hashimoto, T ^b   Umemura, K ^a   Asayama, K ^c  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NEEDLES; SILICON;

FOCUSED IONS BEAMS; ION BEAM SCANNING; ION SCANNING; MICRO PILLARS; NOVEL TECHNIQUES; ROTATION MECHANISM; SAMPLE HOLDERS; SAMPLE STAGES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SI DEVICES;

ION BEAMS;

EID: 85124101896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa2003p0282     Document Type: Conference Paper

References (4)

1. T.Ohnishi and T.Ishitani, JP Patent 2774884 and US patent 5270552.
2. T.Onishi, H.Koike, T.Ishitani, S.Tomimatsu, K.Umemura and T.Kamino: Proc. 25 th Int. Symp. for Testing and Failure Analysis 449-453 (1999)
3. T.Kamino, T.Yaguchi, Y.Kuroda, T.Hashimoto, T.Onishi, T.Ishitani, K.Umemura and K.Asayama, Proc. Microsc. Microanal. 8 (Suppl.2) 48-49 (2002)
4. T.Ishitani, H.Tsuboi, T.Yaguchi, and H.Koike, J.Electron Microsc., 43: 322-326 E. C. (1994)