Annealing behavior of interstitial nitrogen pair in Czochralski silicon observed by infrared absorption method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

  Tanahashi, Katsuto ^a   Yamada Kaneta, Hiroshi ^a   Inoue, Naohisa ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

Annealing; Czochralski silicon; Infrared absorption; Nitrogen; Oxide precipitate; Void

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HIGH TEMPERATURE EFFECTS; INFRARED RADIATION; LIGHT ABSORPTION; NITROGEN; PRECIPITATION (CHEMICAL);

CZOCHRALSKI SILICON; INFRARED ABSORPTION; OXIDE PRECIPITATES; VOID;

SILICON;

EID: 2942620828     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l436     Document Type: Article

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