Size-Dependent Absorption and Defect States in CdSe Nanocrystals in Various Multilayer Structures

Journal of Nanoscience and Nanotechnology

Volumn 2, Issue 6, 2002, Pages 645-652

  Nesheva, D ^a   Levi, Z ^a   Aneva, Z ^a   Zrinscak, I ^b   Main, C ^b   Reynolds, S ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

Author keywords

Carrier Confinement; CdSe Nanocrystals; Defect States; Optical Absorption; Transient photoconductivity

Indexed keywords

CADMIUM DERIVATIVE; CADMIUM SULFIDE; GERMANIUM; SILICON; SILICON DIOXIDE; SULFIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EVALUATION; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; QUALITY CONTROL; RADIATION EXPOSURE; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; SPECTROPHOTOMETRY;

CADMIUM COMPOUNDS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM; LIGHT; MATERIALS TESTING; NANOTECHNOLOGY; PHOTOCHEMISTRY; QUALITY CONTROL; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SILICON; SILICON DIOXIDE; SPECTROPHOTOMETRY; SULFIDES;

EID: 85047675152     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2002.148     Document Type: Article

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