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Volumn 88, Issue 9, 2002, Pages 4-

Real-Space Measurement of the Potential Distribution Inside Organic Semiconductors

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EID: 85038290486     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.88.096803     Document Type: Article
Times cited : (1)

References (19)
  • 13
    • 85038298568 scopus 로고    scopus 로고
    • The actual barrier height depends, via the image force, on the field at the injecting contact. With (Formula presented) the difference between the HOMO level and the metal Fermi level is meant
    • The actual barrier height depends, via the image force, on the field at the injecting contact. With (Formula presented) the difference between the HOMO level and the metal Fermi level is meant.
  • 17
    • 85038345418 scopus 로고    scopus 로고
    • One would expect plateaus of width 0.1–0.5 eV at both sides of (Formula presented). From Figs. 1(b) and 3 it is clear that the resulting plateaus are beyond experimental resolution. With the low-work-function metal Yb for electrode material, a plateau of about 3 eV was observed at negative bias, as expected (not shown)
    • One would expect plateaus of width 0.1–0.5 eV at both sides of (Formula presented). From Figs. 1(b) and 3 it is clear that the resulting plateaus are beyond experimental resolution. With the low-work-function metal Yb for electrode material, a plateau of about 3 eV was observed at negative bias, as expected (not shown).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.