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Landsberg, P.T.1
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90
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0033079594
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New quantitative theory of p-n junction impedance: Analytical resolution of past misconceptions
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Laux, S. E., and Hess, K. “New quantitative theory of p-n junction impedance: analytical resolution of past misconceptions,” IEEE Transactions on Electron Devices, vol. ED-46, 1999, pp. 396-412 (1999).
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IEEE Transactions on Electron Devices
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Laux, S.E.1
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91
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84944485870
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A proposed high frequency, negative-resistance diode
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Read, W. T., “A proposed high frequency, negative-resistance diode,” Bell System Technology Journal, vol. 37,1958, p. 401.
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Bell System Technology Journal
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Read, W.T.1
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Modeling and Characterization of dopant redistributions in metal and silicide contacts
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Shenai, K., et al. “Modeling and Characterization of dopant redistributions in metal and silicide contacts,” IEEE Transactions on Electron Devices, vol. ED-32,1985, p. 793.
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IEEE Transactions on Electron Devices
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Shenai, K.1
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95
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0000241888
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Band structure dependant transport and impact ionization in GaAs
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Shichijo, H., and Hess, K. “Band structure dependant transport and impact ionization in GaAs,” Physical Review B, vol. 23,1981, pp. 4197-4207.
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(1981)
Physical Review B
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Shichijo, H.1
Hess, K.2
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96
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0022151907
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Impact ionization in InP and GaAs
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Stillman, G. E., Robbins, V. M., and Hess, K. “Impact ionization in InP and GaAs,” Physica, vol. 134B-C 1985, p. 241.
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(1985)
Physica
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Stillman, G.E.1
Robbins, V.M.2
Hess, K.3
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100
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0003400090
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Berlin: Springer-Verlag
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Chow, W. W., Koch, S. W., and Sargent, M. III Semiconductor-Laser Physics, Berlin: Springer-Verlag, 1994.
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(1994)
Semiconductor-Laser Physics
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Chow, W.W.1
Koch, S.W.2
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102
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0031698477
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Simulation of Carrier Transport and Nonlinearities in Quantum-Well Laser Diodes
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see errata p. 384
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Grupen, M., and Hess, K. “Simulation of Carrier Transport and Nonlinearities in Quantum-Well Laser Diodes,” IEEE Journal of Quantum Electronics, vol. 34, 1998, pp. 120-140, (see errata p. 384).
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(1998)
IEEE Journal of Quantum Electronics
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Grupen, M.1
Hess, K.2
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103
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0028764159
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Native-oxide defined ring contact for low-threshold vertical-cavity lasers
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Huffaker, D. L., et al. “Native-oxide defined ring contact for low-threshold vertical-cavity lasers,” Applied Physics Letters, vol. 65, 1994, pp. 97-99.
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Applied Physics Letters
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Huffaker, D.L.1
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104
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0029490898
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Simulation of Carrier Capture in Quantum Well Lasers due to Strong Inelastic Scattering
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Register, L. F., and Hess, K. “Simulation of Carrier Capture in Quantum Well Lasers due to Strong Inelastic Scattering,” Superlattices and Microstructures, vol. 18, 1995, pp. 223-228.
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(1995)
Superlattices and Microstructures
, vol.18
, pp. 223-228
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-
Register, L.F.1
Hess, K.2
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105
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-
0141861539
-
Physics and modeling of submicron insulated gate field effect transistors
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eds. N. G. Einspruch and G. Sh. Gildenblatt. New York: Academic
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Ferry, D. K., Hess, K., and Vogl, P. “Physics and modeling of submicron insulated gate field effect transistors,” in VLSI Electronics, vol. 2, pp. 68-104, eds. N. G. Einspruch and G. Sh. Gildenblatt. New York: Academic, 1981.
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(1981)
VLSI Electronics
, vol.2
, pp. 68-104
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Ferry, D.K.1
Hess, K.2
Vogl, P.3
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106
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0031999501
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Giant isotope effect in hot electron degradation of metal-oxide-silicon devices
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Hess, K., Kizilayalli, I. C., and Lyding, J. W. “Giant isotope effect in hot electron degradation of metal-oxide-silicon devices,” IEEE Transactions on Electron Devices, vol. 45, 1998, pp. 406-416.
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IEEE Transactions on Electron Devices
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Hess, K.1
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107
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84945713471
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Hot-electron-induced MOFSET degradation: Model, monitor, and improvement
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Hu, C., et al. “Hot-electron-induced MOFSET degradation: model, monitor, and improvement,” IEEE Transactions on Electron Devices, vol. ED-32,1985, pp. 375-385.
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Hu, C.1
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Approaches to scaling in advanced MOS device physics
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110
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Measurement of the minority carrier transport parameters in heavily doped silicon
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Mertens, R., and Van Overstraaten, R. “Measurement of the minority carrier transport parameters in heavily doped silicon,” IEEE Technical Digest, International Electron Devices Meeting, 1978, p. 322.
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(1978)
IEEE Technical Digest, International Electron Devices Meeting
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Mertens, R.1
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111
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0017908429
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Hot-electron emission from silicon into silicon dioxide
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Ning, T. H. “Hot-electron emission from silicon into silicon dioxide,” Solid State Electronics, vol. 21, pp. 273-282, 1978
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Quantum cellular automata
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Lent, C. S., Tougaw, D. P., Porod, W., and Bernstein, G. H. “Quantum cellular automata,” Nanotechnology, vol. 4, 1993, pp. 49-57.
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Simulation of elctronic properties and capacitance of quantum dots
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Macucci, M., Hess, K., and Iafrate, G. J. “Simulation of elctronic properties and capacitance of quantum dots,” Joumel of Applied Physics, vol. 77,1995, p. 3267.
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(1995)
Joumel of Applied Physics
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Macucci, M.1
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120
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0346332115
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Shell filling effects in quantum dots
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Tarucha, S., et al. “Shell filling effects in quantum dots,” Physical Review Letters, vol. 77,1996, p. 3613.
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