Improved extrinsic base resistance extraction for InP DHBT devices

German Microwave Conference, GEMIC 2008

Volumn , Issue , 2008, Pages

  Johansen, Tom ^a   Krozer, Viktor ^a   Nodjiadjim, Virginie ^b   Konczykowska, Agnieszka ^b   Dupuy, Jean Yves ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b ALCATEL THALES III V LAB   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EXTRACTION;

BASE RESISTANCE; BASE-COLLECTOR CAPACITANCE; COLLECTOR CURRENTS; CURRENT CROWDING; EXTRACTION METHOD; FULLY DEPLETED; INTRINSIC BASE RESISTANCE; NOVEL EXTRACTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 85010952024     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. H. Camnitz and other, "An accurate large signal high frequency model for GaAs HBTs, " in 1996 GaAs IC Symposion, 1996, pp. 303-306.494
2. C. Wei and J. C. M. Hwang, "Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors, " IEEE Trans. Microwave Theory and Techniques, vol. Vol. 43, no. 9, pp. 2035-2040, Sept. 1995.
3. Y. Gobert, P. J. Tasker, and K. H. Bachem, "A Physical, Y et Simple, Small-Signal Equivalent Circuit for the Heterojunction Bipolar Transistor, " IEEE Trans. Microwave Theory and Techniques, vol. Vol. 45, no. 1, pp. 149-153, Jan. 1997.
4. L. H. Camnitz and N. Moll, "An analysis of the cutoff-frequency behavior of microwave heterostructure bipolar transistors, " in Compound Semiconductor Transistors, Physic s and Technology. IEEE Press, 1993, pp. 21-46.
5. J. S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. Wiley Interscience, 1999.
6. T. K. Johansen et al., "A Novel Method for HBT Intrinsic Collector Resistance Extraction From S-Parameters, " in To be published Proc . APMC07, 2007.