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Volumn 118, Issue 1, 1998, Pages 32-36

Anisotropic Bulk Etching of (110) Silicon with High Aspect Ratio

Author keywords

(110) silicon; anisotropic bulk etching; comb structure; high aspect ratio

Indexed keywords


EID: 85010111987     PISSN: 13418939     EISSN: 13475525     Source Type: Journal    
DOI: 10.1541/ieejsmas.118.32     Document Type: Article
Times cited : (8)

References (11)
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    • Oct
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  • 2
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  • 3
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    • Anisotropic Etching of Silicon
    • Oct
    • K. E. Bean, “Anisotropic Etching of Silicon,” IEEE Trans. Electron Devices, Vol. Ed-25, No. 10, Oct. 1978, pp. 1185-1193.
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    • Bean, K.E.1
  • 4
    • 0020735999 scopus 로고
    • Anisotropic Etching of Silicon: a Model Diffusion Controlled Reaction
    • D. M. Allen, “Anisotropic Etching of Silicon: a Model Diffusion Controlled Reaction,” IEE Proc., Vol. 130, No. 2, 1983, pp. 49-56.
    • (1983) IEE Proc. , vol.130 , Issue.2 , pp. 49-56
    • Allen, D.M.1
  • 5
    • 0029323744 scopus 로고
    • Etch rate and surface roughness of deep narrow U-grooves in (110)-oriented silicon
    • P. Krause, “Etch rate and surface roughness of deep narrow U-grooves in (110)-oriented silicon,” J. Micromech. Microeng. 5, 1995, pp. 112-114.
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    • Krause, P.1
  • 6
    • 0028014977 scopus 로고
    • Micro-Opto-Mechanical Devices Fabricated by Anisotropic Etching of (110) Silicon
    • Y. Uenishi, “Micro-Opto-Mechanical Devices Fabricated by Anisotropic Etching of (110) Silicon,” IEEE MEMS, 1994, pp. 319-324.
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    • Uenishi, Y.1
  • 7
    • 85010172430 scopus 로고
    • Micropyramid Inhibition Method in Anisotropic Etching of Silicon
    • H. Kishi, “Micropyramid Inhibition Method in Anisotropic Etching of Silicon,” Shinkuu, Vol. 29, No.2, 1986, pp. 85-91.
    • (1986) Shinkuu , vol.29 , Issue.2 , pp. 85-91
    • Kishi, H.1
  • 8
    • 0025793011 scopus 로고
    • Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching
    • A. Koide, K. Sato, “Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching,” IEEE MEMS, 1991, pp. 216-220.
    • (1991) IEEE MEMS , pp. 216-220
    • Koide, A.1    Sato, K.2
  • 9
    • 0030677613 scopus 로고    scopus 로고
    • Characterization of anisotropic etching properties of single-crystal silicon: effects of KOH concentration on etching profiles
    • K. Sato, “Characterization of anisotropic etching properties of single-crystal silicon: effects of KOH concentration on etching profiles,” IEEE MEMS, 1997, pp. 406-411.
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  • 10
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    • Determination of rates for orientation-dependent etching
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  • 11
    • 0029350531 scopus 로고
    • Groove depth Uniformization in (110) Si Anisotropic Etching by Ultrasonic Wave and Application to Accelerometer Fabrication
    • K. Ohwada, “Groove depth Uniformization in (110) Si Anisotropic Etching by Ultrasonic Wave and Application to Accelerometer Fabrication,” Sensors and Actuators A 50, 1995, pp. 93-98.
    • (1995) Sensors and Actuators , vol.50 A , pp. 93-98
    • Ohwada, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.