Temperature-Dependent Saturation Characteristics of Injection Seeded Fabry-Pérot Laser Diodes/Reflective Optical Amplifiers

Journal of Lightwave Technology

Volumn 28, Issue 3, 2010, Pages 240-245

  Meng, Hongyun ^a   Moon, Jung Hyung ^b   Lee, Chang Hee ^b   Choi, Ki Man ^c  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c KT Cooperation   (South Korea)

Author keywords

Light injection; wavelength division multiplexed (WDM) passive optical network; wavelength locked Fabry Perot laser diode (F P LD)

Indexed keywords

EID: 85008544177     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/JLT.2009.2038596     Document Type: Article

References (12)

1. H. D. Kim, S. G. Kang, and C. H. Lee, “A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser,” IEEE Photon. Technol. Lett., vol. 12, no. 8, pp. 1067–1069, Aug. 2000.
2. S. M. Lee, K. M. Choi, S. G. Mun, J. H. Moon, and C. H. Lee, “Dense WDM-PON based on wavelength-locked Fabry-Perot laser diodes,” IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1579–1581, Jul. 2005.
3. K. M. Choi, J. S. Baik, and C. H. Lee, “Color-free operation of dense WDM-PON based on the wavelength-locked Fabry-Perot laser diodes injecting a low-noise BLS,” IEEE Photon. Technol. Lett., vol. 18, no. 10, pp. 1167–1169, Mar. 2006.
4. X. F. Cheng, Y. J. Wen, Y. Dong, Z. W. Xu, X. Shao, Y. X. Wang, and C. Lu, “Optimization of spectrum-sliced ASE source for injection-locking a Fabry-Perot laser diode,” IEEE Photon. Technol. Lett., vol. 18, no. 18, pp. 1961–1963, Sep. 2006.
5. S. M. Lee, M. H. Kim, and C. H. Lee, “Demonstration of a bidirectional 80-km-reach DWDM-PON with 8-Gb/s capacity,” IEEE Photon. Technol. Lett., vol. 19, no. 6, pp. 405–407, Mar. 2007.
6. K. Y. Park and C. H. Lee, “Intensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE,” IEEE J. Quantum Electron., vol. 44, no. 3, pp. 209–215, Mar. 2008.
7. K. Y. Park, S. G. Mun, K. M. Choi, and C. H. Lee, “A theoretical model of a wavelength-locked Fabry-Perot laser diode to the externally injected narrow-band ASE,” IEEE Photon. Technol. Lett., vol. 17, no. 9, pp. 1797–1799, Sep. 2005.
8. M. J. O'Mahony “Semiconductor laser optical amplifiers for use in future fiber systems,” J. Lightw. Technol., vol. 6, no. 4, pp. 531–544, Apr. 1988.
9. J. W. Wang, H. N. Olesen, and K. E. Stubkjaer “Recombination, gain and bandwidth characteristics of 1.3-µm semiconductor laser amplifiers,” J. Lightw. Technol., vol. LT-5, no. 1, pp. 184–189, Jan. 1987.
10. L. I. Burov, V. P. Gribkovskii, P. S. Grigelevich, M. I. Kramar, G. I. Ryabtsev, K. A. Shore, S. V. Voitikov, and R. Kragler, “Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes,” Int. J. Numer. Model., vol. 14, pp. 331–343, 2001.
11. 1-y double heterostructures grown on InP substrates,” J. Appl. Phys., vol. 94, no. 3, pp. 1738–1743, Aug. 2003.
12. T. Yamatoya and F. Koyama, “Noise suppression of spectrum-sliced light using semiconductor optical amplifiers,” Electron. Commun. Jpn. Part 2, vol. 86, no. 2, pp. 417–423, Jun. 2002.