Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 14, Issue 4, 2001, Pages 331-343

  Burov, L I ^a   Gribkovskii, V P ^b   Grigelevich, P S ^c   Kramar, M I ^d   Ryabtsev, G I ^a,d   Shore, K A ^a,d   Voitikov, S V ^b   Kragler, R ^c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c BANGOR UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF APPLIED SCIENCES RAVENSBURG WEINGARTEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; FREQUENCY HOPPING; LIGHT MODULATION; LUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; THERMAL EFFECTS;

AMPLIFIED LUMINESCENCE; AUGER RECOMBINATION; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0035391878     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.416     Document Type: Article

References (23)

1. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers
2. Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure
3. Trapped radiation in injection lasers
4. Injection lasers
5. Influence of cavity-trapped amplified luminescence on laser diode optical properties
6. Using Mathematica for computer simulation of optical processes in laser diode cavity
7. Systematic empirical study of the effect of well number of length on the temperature sensitivity of threshold current in InGaAsP-InP MQW lasers
8. Auger and SHR recombination influence on laser diode dynamics
9. The theory of the injection laser
10. Nonlinear and quantum optics in semiconductor lasers
11. Internal parameters of injection lasers with quantum well active layer
12. Recombination processes in InGaAsP/InP DH with λ = 1.5 μm
13. On the temperature dependence of threshold of InGaAsP/InP heterojunction lasers
14. Ultra-high speed semiconductor lasers
15. High speed quantum-well lasers and carrier transport effects
16. Threshold current, differential gain and relaxation resonance frequency of 1.55-μm bulk and MQW DFB laser diodes
17. Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB Psubstrate partially inverted buried heterostructure laser diodes