High-Power Semiconductor-Based Nano and Subnanosecond Pulse Generator With a Low Delay Time

IEEE Transactions on Plasma Science

Volumn 33, Issue 4, 2005, Pages 1240-1244

  Grekhov, Igor V ^a   Korotkov, Sergey V ^a   Stepaniants, Anatoly L ^a   Khristyuk, Dmitry V ^a   Voronkov, Vladimir B ^a   Aristov, Yury V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Power semiconductor devices; pulse power system; pulse shaping methods; semiconductor diode switches; switches

Indexed keywords

EID: 85008065126     PISSN: 00933813     EISSN: 19399375     Source Type: Journal    
DOI: 10.1109/TPS.2005.852349     Document Type: Article

References (7)

1. I. Grekhov and A. Kardo-Sysoev, “Subnanosecond current drop in the delayed breakdown of silicon pn-junction,” Sov. Tech. Phys. Lett., vol. 5, p. 395, 1979.
2. V. Tuchkevitch and I. Grekhov, “New principles of high power switching with semiconductor devices,” Bull. Acad. Sci. USSR, no. 4, p. 18, 1987. in Russian.
3. V. Efanov, A. Kardo-Sysoev, I. Tchashnicov, and P. Yarin, “New superfast power closing switches—Dynistors on delayed ionization,” presented at the 22nd Int. Power Modulator Symp., Boca Raton, FL, 1996.
4. I. Grekhov, V. Efanov, A. Kardo-Sysoev, and S. Shenderey, “Power drift step recovery diode,” Solid State Electron., vol. 28, pp. 597–599, 1985.
5. I. Grekhov and G. Mesyats, “Physical basis for high-power semiconductor nanosecond opening switches,” IEEE Trans. Plasma Sci., vol. 28, no. 5, p. 1540, Oct. 2000.
6. V. Efanov et al., “Powerful semiconductor 80 kV nanosecond pulser,” in Abstracts 11th IEEE Int. Pulsed Power Conf., Baltimore, MD, 1997, p. 273.
7. A. Pemen et al., “Pulsed corona generation using a diode-based pulsed power generator,” Rev. Sci. Instrum., vol. 74, no. 10, pp. 4361–4365, 2003.