Physical basis for high-power semiconductor nanosecond opening switches

IEEE Transactions on Plasma Science

Volumn 28, Issue 5, 2000, Pages 1533-1539

  Grekhov, Igor V ^a   Mesyats, Gennady A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Power semiconductor diode switches; Pulse generation; Semiconductor plasmas

Indexed keywords

EID: 33747241945     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.901228     Document Type: Article

References (5)

1. I.V. Grekhov, V.M. Efanov, A. F. Kardo-Sysoev, and S. V. Shenderey, "Power drift step recovery diode," Solid State El., vol. 28, pp. 597-599, 1985.
2. V.M. Efanov, A. F. Kardo-Sysoev, and M. A. Larionov, et al., "Powerful semiconductor 80 kV nanosecond pulser," in Abstracts llth IEEE Int. Pulsed Power Conf.. Baltimore, MD, 1997, p. 277.
3. I.V. Grekhov, "Mega and gigawatts-ranges, repetitive mode, semiconductor closing and opening switches," in Abstracts of llth IEEE Int. Pulsed Power Conf.. Baltimore, MD, 1997, p. 010.8.
4. S.K. Lyubutin, S. N. Rukin, and S. P. Timoshenkov, "Investigation of semiconductor opening s witch using in high power pulse generators with inductive storage" (in Russian), in Proc. 9th Symp. High-Current EL, Russia, 1992, pp. 218-219.
5. S.A. Darznek, Y. A. Kotov, G. A. Mesyats, and S. N. Rukin, "SOSeffect: nanosecond break of ultrahigh density current in semiconductors" (in Russian), in Doklady RAN, vol. 334, 1994, pp. 304-306.