Annealing Effects on Defect Levels of CdTe: Cl Materials and the Uniformity of the Electrical Properties

IEEE Transactions on Nuclear Science

Volumn 50, Issue 2, 2003, Pages 229-237

  Ayoub, M ^a   Hage Ali, M ^a   Koebel, J M ^a   Zumbiehl, A ^a   Rit, C ^a   Regal, R ^a   Klotz, F ^a   Siffert, P ^a   Fougeres, P ^b  

^a Faculté de Médecine   (France)

^b EURORAD   (France)

Author keywords

Annealing; CdTe; defects; homogeneity; performance detection; photo induced transient current spectroscopy (PICTS); resistivity; thermally stimulated current (TSC); thermo electric emission spectroscopy (TEES); product

Indexed keywords

EID: 85008043255     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2003.809981     Document Type: Article

References (26)

1. J. H. Greenberg, “P-T-X phase equilibrium and vapor pressure scanning of nonstoichiometry in CdTe,” J. Cryst. Growth, vol. 161, no. 1-4, pp. 1-11, 1996.
2. A. Zumbiehl, M. Hage Ali, M. Ayoub, R. Regal, J. M. Koebel, and P. Siffert, “Study of the homogeneity of CdTe-THM monolithic nuclear detector arrays: The role of electron lifetime and leakage current,” IEEE Trans. Nucl. Sci., vol. 49, pp. 1254-1257, June 2002.
3. M. Ayoub, M. Hage Ali, J. M. Koebel, R. Régal, C. Rit, F. Klotz, and P. Siffert, “Real defect concentration measurements of nuclear detector materials by combination of PICTS and SCLC methods,” Mater. Sci. Eng., vol. B83, pp. 173-179, 2001.
4. M. Samimi, B. Biglari, M. Hage Ali, J. M. Koebel, and P. Siffert, “About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride,” Phys. Status Solidi, vol. A100, pp. 251-258, 1987.
5. B. M. Vul, V. S. Vavilov, V. S. Ivanov, V. B. Stopachinskii, and V. A. Chapnin, “Invest gation of doubly charged acceptors in cadmium telluride,” Sov. Phys. Semicond., vol. 6, no. 8, pp. 1255-1260, 1973.
6. N. V. Agrinskaya, E. N. Arkadeva, and O. A. Matveev, “Donor-cadmium vacancy associations in cadmium telluride,” Sov. Phys. Semicond., vol. 5, pp. 347-352, 1971.
7. C. Canali, G. Ottaviani, R. O. Bell, and F. V. Wald, “Self-compensation in CdTe,” J. Phys. Chem. Solids, vol. 35, pp. 1405-1413, 1974.
8. B. K. Meyer,W. Stadler, and D. M. Hofmann, “On the nature of the deep 1.4 eV emission bands in CdTe-a study with photoluminescence and ODMR spectroscopy,” J. Cryst. Growth, vol. 117, pp. 656-659, 1992.
9. K. Suziki, S. Seto, A. Tanaka, and M. Kawashima, “Carrier drift mobilities and PL spectra of high resistivity cadmium telluride,” J. Cryst. Growth, vol. 101, pp. 859-863, 1990.
10. M. Fiederle, D. Ebling, C. Eiche, D. M. Hofmann, M. Salk, W. Stadler, K. W. Benz, and B. K. Meyer, “Comparison of CdTe, Cd Zn Te and CdTe Se crystals: application of and X-ray detectors,” J. Cryst. Growth, vol. 138, pp. 529-533, 1994.
11. B. K. Meyer, P. Omling, E. Weigel, and G. Muller-Vogt, “F center in CdTe,” Phys. Rev., vol. B46, pp. 15135-15138, 1992.
12. W. Stadler, D. M. Hofmann, H. C. Alt, T. Mutschik, and B. K. Meyer, “Optical investigations of defects in Cd Zn Te,” Phys. Rev., vol. B51, pp. 10619-10630, 1995.
13. V. P. Zayachkivskii, A. V. Savitskii, E. S. Nikonyunk, M. S. Kitsa, and V. V. Matlak, “Energy spectrum of capture levels in germanium-doped cadmium telluride,” Sov. Phys. Semicond., vol. 8, pp. 675-676, 1974.
14. M. Hage Ali and P. Siffert, “Status of semi-insulating cadmium telluride for nuclear radiation detectors,” Nucl. Instrum. Methods Phys. Res., vol. A322, pp. 313-323, 1992.
15. F. A. Kroger, “The defect structure of CdTe,” Rev. Phys. Appl., vol. 206, no. T12, N2, pp. 205-210, 1977.
16. A. Castaldini, A. Cavallini, and B. Fraboni, “Deep energy levels in CdTe and CdZnTe,” J. Appl. Phys., vol. 83, no. N4, pp. 2111-2126, 1998.
17. K. Lischka, G. Brunthaler, and W. Jantsch, “Deep donor levels due to isolated Fe IN CdTe,” J. Cryst. Growth, vol. 72, pp. 355-359, 1985.
18. M. Laash, M. Schwarz, M. Joeger, C. Eiche, and M. Fiederle, “Characterization of cadmium telluride crystals grown by different techniques from the vapor phase,” J. Cryst. Growth, vol. 146, pp. 125-129, 1995.
19. P. Hoschl, R. Grill, J. Franc, P. Moravec, and E. Belas, “Native defect equilibrium in semi-insulating CdTe(Cl),” Mater. Sci. Eng. B, vol. 16, pp. 215-218, 1993.
20. A. Zumbiehl, S. Mergui, M. Ayoub, M. Hage Ali, A. Zearrai, K. Cherkaoui, G. Marrakchi, and Y. Darici, “Compensation origins in II-VI CZT materials,” Mater. Sci. Eng., vol. B71, pp. 297-300, 2000.
21. P. Moravec, M. Hage Ali, L. Chibani, and P. Siffert, “Deep levels in semi-insulating CdTe,” Mater. Sci. Eng., vol. B16, pp. 223-227, 1993.
22. T. Tabeke, J. Saraie, and H. Matsunami, “Detailed characterization of deep centers in CdTe: photoionization and thermal ionization properties,” J. Appl. Phys., vol. 53, pp. 457-469, 1982.
23. D. M. Hofmann, W. Stadler, P. Christmann, and B. K. Meyer, “Defects in CdTe and Cd Zn Te,” Nucl. Instrum. Methods A, vol. 380, pp. 117-120, 1996.
24. H.J. Von Bardeleben, T. Arnoux, and J. C. Launay, “Intrinsic defects in photorefractive bulk CdTe and ZnCdTe,” J. Cryst. Growth, vol. 197, pp. 718-723, 1999.
25. W. Jantsch and W. Hendorfer, “Characterization of deep levels in CdTe by photo-EPR and related techniques,” J. Cryst. Growth, vol. 101, pp. 404-413, 1990.
26. R. E. Kremer andW. B. Leigh, “Deep levels in CdTe,” J. Cryst. Growth, vol. 86, pp. 490-496, 1988.