N-Type Porous Silicon Doping Using Phosphorous Oxychloride (POCI3)

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 436-438

  El Bahar, A ^a   Stolyarova, S ^a   Nemirovsky, Y ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

N type doping; POCI3; porous silicon

Indexed keywords

EID: 85008016577     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.863102     Document Type: Article

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