Atmospheric downstream plasma etching of Si wafers

Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium

Volumn , Issue , 1998, Pages 139-145

  Siniaguine, O ^a  

^a Tru Si Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CLOSED LOOP SYSTEMS; CRYSTAL DEFECTS; ELECTRIC DISCHARGES; INDUSTRIAL ELECTRONICS; INERT GASES; ION BOMBARDMENT; MANUFACTURE; PLASMA ETCHING; PLASMA STABILITY; SURFACE ROUGHNESS;

CONTAMINATION LEVELS; CRITICAL SUCCESS FACTOR; DOWN-STREAM PLASMAS; HIGH TEMPERATURE; PROCESS CHAMBERS; SURFACE CONTAMINATIONS; THICKNESS UNIFORMITY; WAFER TEMPERATURE;

SILICON WAFERS;

EID: 85007140799     PISSN: 10898190     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEMT.1998.731068     Document Type: Conference Paper

References (7)

1. I. Blech and B. Dang, "Silicon Wafer Deformation After Backside Grinding", Solid State Technology, August, 1994, pp. 73-76.
2. M. K. Grief, J. A. Steele, "Warpage And Mechanical Strength Studies of Ultra-thin 150mm Wafers", DEEE/CPMT Int'l Electronics Manufacturing Technology Symposium, 1996, pp. 190-194.
3. H. Kruwinus, "One Final Etch", European Semiconductor, October, 1995.
4. R. Mendelson, D. Diefenderfer, C. M. Gumbert, B. Singh, "Optimized Backgrind Wafer Process Minimizes Stress Effects", Semiconductor International, October, 1996, pp. 221-226.
5. O. Siniaguine, US Patent 5, 767, 627
6. "Tru-Etch Series One-Step All-dry Wafer Backside Treatment System", Product Datasheet 804, Tru-Si Technologies, Inc. 657 N. Pastoria Ave., Sunnyvale, CA 94086
7. O. Siniaguine, B. Balats, I. Bagriy " Plasma processing of silicone wafers at atmospheric pressure", Electronic Industry, N. 6, 1994, Moscow., pp. 27-30.