Highly thermally-stable ofets fabricated with liquid crystalline organic semiconductors

Digest of Technical Papers - SID International Symposium

Volumn 43, Issue 1, 2012, Pages 497-500

  Iino, Hiroaki ^a,b   Usui, Takayuki ^a,b   Kobori, Takeo ^a,b   Hanna, Jun Ichi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Benzothienobenzothiophene (BTBT) derivative; Highly ordered liquid crystal phase; Organic thin film transistors (OTFTs); Soluble crystalline materials; Thermal stability

Indexed keywords

CRYSTALLITES; FABRICATION; SMECTIC LIQUID CRYSTALS; THERMAL STRESS; THERMODYNAMIC STABILITY; THIN FILM CIRCUITS; THIN FILMS;

LIQUID CRYSTAL PHASE; LIQUID CRYSTALLINE; ORGANIC THIN FILM TRANSISTOR (OTFTS); POLYCRYSTALLINE THIN FILM; PROCESSABILITY; SMECTIC PHASE; SOLUTION PROCESS; THERMALLY STABLE;

THIN FILM TRANSISTORS;

EID: 84991272759     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1002/j.2168-0159.2012.tb05826.x     Document Type: Conference Paper

References (6)

1. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, and T. Yui, “Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors,” J. Am. Chem. Soc. 129, 15732-15733 (2007).
2. K. Okamoto, T. Kawamura, M. Sone, and K. Ogino, “Study on liquid crystallinity in 2,9-dialkylpentacenes,” Liq. Cryst. 34, 1001-1007 (2007).
3. B. Kosata, V. Kozmik, J. Svoboda, V. Novotna, P. Vanek, and M. Glogarova, “Novel liquid crystals based on [1]benzothieno[3,2-b][1]benzothiophene,” Liq. Cryst. 30, 603-610 (2003).
4. J. Hanna, T. Kobori, T. Usui, Y. Takayashiki, H. Iino, and A. Ohno, to be submitted (2012).
5. H. Iino and J. Hanna, J. Appl. Phys., “Liquid crystalline thin films as a precursor for polycrystalline thin films aimed at field effect transistors,” 109, 074505 (2011).
6. H. Iino and J. Hanna, “Availability of Liquid Crystallinity in Solution Processing for Polycrystalline Thin Films,” Adv. Mater., 23, 1748-1751 (2011).