Availability of liquid crystallinity in solution processing for polycrystalline thin films

Advanced Materials

Volumn 23, Issue 15, 2011, Pages 1748-1751

  Iino, Hiroaki ^a   Hanna, Jun Ichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

field effect transistors; liquid crystals; polycrystalline materials; solution processing

Indexed keywords

LIQUID CRYSTALLINE MATERIALS; LIQUID CRYSTALLINE PHASE; LIQUID CRYSTALLINITY; NANO-METER SCALE; POLYCRYSTALLINE; POLYCRYSTALLINE THIN FILM; POST-THERMAL ANNEALING; SOLUTION PROCESSING; TERTHIOPHENES; UNIFORM FILMS;

CRYSTALS; FIELD EFFECT TRANSISTORS; LIQUID CRYSTALS; THIN FILMS;

POLYCRYSTALLINE MATERIALS;

POLYMER;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL STRUCTURE; CHEMISTRY; LIQUID CRYSTAL; PARTICLE SIZE; SOLUTION AND SOLUBILITY; SURFACE PROPERTY;

LIQUID CRYSTALS; MEMBRANES, ARTIFICIAL; MOLECULAR STRUCTURE; PARTICLE SIZE; POLYMERS; SOLUTIONS; SURFACE PROPERTIES;

EID: 79954485045     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201004474     Document Type: Article

References (16)

1. A. Afzali, C. Dimitrakopoulos, T. J. Breen, J. Am. Chem. Soc. 2002, 124, 8812.
2. S. Aramaki, Y. Sakai, N. Ono, Appl. Phys. Lett. 2004, 84, 2085.
3. C. D. Sheraw, T. N. Jackson, D. L. Eaton, J. E. Anthony, Adv. Mat. 2003, 15, 2009.
4. H. Katz, J. Laquindanum, A. Lovinger, Chem. Mater. 1998, 10, 633.
5. F. Garnier, R. Hajlaoui, A. Kassmi, G. Horowitz, L. Laigre, W. Porzio, M. Armanini, F. Provasoli, Chem. Mater. 1998, 10, 3334.
6. A. J. J. M. van Breemen, P. T. Herwig, C. H. T. Chlon, J. Sweelssen, H. F. M. Schoo, S. Setayesh, W. M. Hardeman, C. A. Martin, D. M. de Leeuw, J. J. P. Valeton, C. W. M. Bastiaansen, D. J. Broer, A. R. Popa-Merticaru, S. C. J. Meskers, J. Am. Chem. Soc. 2006, 128, 2336.
7. W. Pisula, A. Menon, M. Stepputat, I. Lieberwirth, U. Kolb, A. Tracz, H. Sirringhaus, T. Pakula, K. Müllen, Adv. Mater. 2005, 17, 684.
8. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, T. Yui, J. Am. Chem. Soc. 2007, 129, 15732.
9. S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, T. N. Jackson, Appl. Phys. Lett. 1998, 72, 1854.
10. Z. Bao, A. Dodabalapur, A. J. Lovinger, Appl. Phys. Lett. 1996, 69, 4108.
11. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, D. M. de Leeuw, Nature 1999, 401, 685.
12. H. Sirringhaus, R. Wilson, R. Friend, M. Inbasekaran, W. Wu, E. Woo, M. Grell, D. Bradley, Appl. Phys. Lett. 2000, 77, 406.
13. I. McCulloch, M. Heeney, D. Bailey, K. Genevicius, I. Macdonald, M. Shkunov, D. Sparrowe, S. Tierney, R. Wagner, W. Zhang, M. Chabinyc, R. Kline, M. Mcgenee, M. Toney, Nat. Mater. 2006, 5, 328.
14. M. Funahashi, J. Hanna, Appl. Phys. Lett. 2000, 76, 2574.
15. H. Iino, J. Hanna, Jpn. J. Appl. Phys. 2006, 45, L867.
16. T. Izawa, E. Miyazaki, K. Takimiya, Adv. Mater. 2008, 20, 3388.