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Volumn 109, Issue 14, 2016, Pages

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3-δ thin films and a method of stabilization

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS FILMS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; IRON COMPOUNDS; OXIDE FILMS; PASSIVATION; PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS; STRUCTURAL PROPERTIES; THIN FILMS; VACANCIES;

EID: 84990841968     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4964384     Document Type: Article
Times cited : (24)

References (22)
  • 15
    • 84990843769 scopus 로고    scopus 로고
    • U.S. patent 9353435 (31 May)
    • P. C. Dowden and Q. X. Jia, U.S. patent 9353435 (31 May 2016).
    • (2016)
    • Dowden, P.C.1    Jia, Q.X.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.