Electronic structures and edge effects of Ga2S2nanoribbons

Chinese Physics B

Volumn 25, Issue 10, 2016, Pages

  Wang, Bao Ji ^a   Li, Xiao Hua ^a   Zhang, Li Wei ^a   Wang, Guo Dong ^a   Ke, San Hang ^b,c  

^a HENAN POLYTECHNIC UNIVERSITY   (China)

^b TONGJI UNIVERSITY   (China)

^c BEIJING COMPUTATIONAL SCIENCE RESEARCH CENTER   (China)

Author keywords

density functional theory; edge effect; electronic structure; Ga2S2nanoribbon

Indexed keywords

BINDING ENERGY; CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; NANORIBBONS; SULFUR COMPOUNDS;

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); CONSTANT VALUES; EDGE EFFECT; GA2S2NANORIBBON; INDIRECT BAND GAP; OSCILLATION BEHAVIOR; RELATIVE STABILITIES; STABLE CONFIGURATION;

DENSITY FUNCTIONAL THEORY;

EID: 84989862844     PISSN: 16741056     EISSN: 20583834     Source Type: Journal    
DOI: 10.1088/1674-1056/25/10/107101     Document Type: Article

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