Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 47-50

  Wang, H ^a   Chang, K W ^a   Chen, T H ^a   Tan, K L ^a   Dow, G S ^a   Allen, B ^a   Berenz, J ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; POWER HEMT; SEMICONDUCTING GALLIUM;

ALGAAS/INGAAS/GAAS; DEVICE TECHNOLOGIES; HEMT TECHNOLOGIES; LOW NOISE; MONOLITHIC COMPONENT; OUTPUT POWER; VOLTAGE CONTROL OSCILLATORS; W BANDS;

III-V SEMICONDUCTORS;

EID: 84989484222     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247226     Document Type: Conference Paper

References (15)

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