SiLK CMP process: Interaction with slurries studied by surface characterization techniques

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 158-160

  Küchenmeister, Frank ^a   Schubert, Ulf ^a   Heeg, Jan ^a   Wenzel, C ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CHEMICAL MECHANICAL POLISHING; DIELECTRIC MATERIALS; SILICA; SILICON WAFERS; SILK; SLURRIES; SURFACE CHEMISTRY;

CMP PROCESS; INTEGRATION TECHNOLOGIES; INTERCONNECT TECHNOLOGY; LOW DIELECTRIC CONSTANT MATERIALS; PATTERNED WAFERS; PLANARIZATION CAPABILITY; SPIN-ON; SURFACE CHARACTERIZATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84989297983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787108     Document Type: Conference Paper

References (3)

1. S.W. Russel, et al, "Integration challenges of Ultralow-k Dielectrics" in 1997 Proceedings "Advanced Metallization Conference", pp. 289-300.
2. F. Küchenmeister, et al., "A comparative CMP study of BCB and SiLK for copper damascene technologies" in 1998 Proceedings "Advanced Metallization Conference", in press.
3. P. Townsend, et al., "SiLK Polymer Coating with Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric", in Proceedings MRS, April 1997, Vol. 476, pp. 9-17.