Crested barrier in the tunnel stack of non-volatile memories

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 907-910

  Irrera, Fernanda ^a   Puzzilli, Giuseppina ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DEPOSITION; ELECTRIC CHARGE; MOS CAPACITORS; PERMITTIVITY; PROBABILITY; SILICA;

FOWLER-NORDHEIM (FN) TUNNELS; NON-VOLATILE MEMORIES (NVM); TUNNEL OXIDES; TUNNEL STACK;

DATA STORAGE EQUIPMENT;

EID: 84988378133     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.026     Document Type: Article

References (3)

1. K.K. Licharev Layered tunnel barriers for non-volatile memory devices Appl Phys Lett 12 15 1998 2137 2139
2. Korotkov A, Licharev KK. Resonant Fowler-Nordheim tunnelling through layered tunnel barriers. Techn Digest IEDM'99. p. 223-6
3. K.K. Licharev Riding the crest of a new wave in memory IEEE Circ Dev 16 4 2000 16 21