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Volumn 93, Issue 20, 2016, Pages

Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers

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EID: 84971280852     PISSN: 24699950     EISSN: 24699969     Source Type: Journal    
DOI: 10.1103/PhysRevB.93.201111     Document Type: Article
Times cited : (176)

References (31)
  • 1
    • 84994310874 scopus 로고    scopus 로고
    • L. Y. Cao, MRS Bull. 40, 592 (2015). 10.1557/mrs.2015.144
    • (2015) MRS Bull. , vol.40 , pp. 592
    • Cao, L.Y.1
  • 13
    • 85139574419 scopus 로고    scopus 로고
    • See Supplemental Material at, for additional sample information, experimental methods, power-dependent photoluminescence, dynamics analysis of suspended monolayer (Equation presented), as-grown (Equation presented), and (Equation presented) monolayers onto sapphire substrates, and details of derivation for the population inversion in the monolayers
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.93.201111, for additional sample information, experimental methods, power-dependent photoluminescence, dynamics analysis of suspended monolayer (Equation presented), as-grown (Equation presented), and (Equation presented) monolayers onto sapphire substrates, and details of derivation for the population inversion in the monolayers.
  • 22
    • 84900331370 scopus 로고    scopus 로고
    • N. Ma and D. Jena, Phys. Rev. X 4, 011043 (2014). 10.1103/PhysRevX.4.011043
    • (2014) Phys. Rev. X , vol.4 , pp. 011043
    • Ma, N.1    Jena, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.