Controlled n-type doping of antimonide/arsenide heterostructures using GaTe

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Volumn , Issue , 2002, Pages 183-184

  Bennett, B R ^a   Magno, R ^a   Ikossi, K ^a   Papanicolaou, N ^a   Boos, J B ^a   Shanabrook, B V ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

ANTIMONIDES; MEMORY EFFECTS; N-TYPE DOPING; P-TYPE; T-GATES;

RECONFIGURABLE HARDWARE;

EID: 84968608509     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MBE.2002.1037820     Document Type: Conference Paper

References (7)

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2. C. Nguyen et al., J. Electr. Mat. 22, 255 (1993).
3. A. Furukawa and M. Mizuta, Electr. Lett. 24, 1378 (1988).
4. G.W. Turner et al., J. Vac. Sci. Techn. B 11, 864 (1993)
5. X. Li et al., Solid State Electr. 41, 1853 (1997)
6. K. Ikossi et al., Solid State Electr. 46, (2002).
7. This is in agreement with earlier work at Lincoln Laboratories; G.W. Turner, private communication.