Ultrasonic-assisted pyrolyzation fabrication of reduced SnO2–x/g-C3N4 heterojunctions: Enhance photoelectrochemical and photocatalytic activity under visible LED light irradiation

Nano Research

Volumn 9, Issue 7, 2016, Pages 1969-1982

  Li, Kai ^a   Zeng, Xiaoqiao ^b   Gao, Shanmin ^a,c   Ma, Lu ^b   Wang, Qingyao ^a   Xu, Hui ^a   Wang, Zeyan ^c   Huang, Baibiao ^c   Dai, Ying ^c   Lu, Jun ^b  

^a LUDONG UNIVERSITY   (China)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c SHANDONG UNIVERSITY   (China)

Author keywords

g C3N4; heterojunctions; light emitting diode light source; photoelectrochemical; reduced SnO2 x

Indexed keywords

CHARGE TRANSFER; DEGRADATION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMISTRY; HETEROJUNCTIONS; IRRADIATION; LIGHT; LIGHT EMITTING DIODES; NANOCOMPOSITES; NANOPARTICLES; NANOSHEETS; OPTICAL PROPERTIES; RATE CONSTANTS;

DEGRADATION RATE CONSTANTS; G-C3N4; LINEAR-SCAN VOLTAMMETRY; PHOTOCATALYTIC PERFORMANCE; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICALS; PHOTOGENERATED ELECTRONS; RECOMBINATION PROCESS;

PHOTOCATALYTIC ACTIVITY;

EID: 84964692767     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-016-1088-8     Document Type: Article

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