Engineering of facets, band structure, and gas-sensing properties of hierarchical Sn2+-Doped SnO2 nanostructures

Advanced Functional Materials

Volumn 23, Issue 38, 2013, Pages 4847-4853

  Wang, Hongkang ^a   Dou, Kunpeng ^a   Teoh, Wey Yang ^a   Zhan, Yawen ^a   Hung, Tak Fu ^a   Zhang, Feihu ^b   Xu, Jiaqiang ^b   Zhang, Ruiqin ^a   Rogach, Andrey L ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

band structure calculations; doping; gas sensing properties; morphology control; SnO2 nanostructures

Indexed keywords

BAND STRUCTURE CALCULATION; GAS SENSING PROPERTIES; HIERARCHICAL ARCHITECTURES; HYDROTHERMAL METHODS; INTERFACIAL CHARGE TRANSFER; MORPHOLOGY CONTROL; OSTWALD RIPENING MECHANISM; VISIBLE SPECTRAL RANGE;

CHEMICAL DETECTION; CONCURRENT ENGINEERING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ENERGY GAP; GAS DETECTORS; LUMINANCE; MORPHOLOGY; NANOFLOWERS; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; SURFACES; TIN;

NANOSHEETS;

EID: 84885408973     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201300303     Document Type: Article

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