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Volumn 2, Issue , 2001, Pages 1040-1042

SEM investigation on IGBT latch-up failure

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84964526724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.982074     Document Type: Conference Paper
Times cited : (12)

References (4)
  • 2
    • 0024016706 scopus 로고
    • The Importance of the n-Base in p-n-p-n -like Structure Subjected to dv/dt Ramps
    • May
    • A.P.Silard,et al., "The Importance of the n-Base in p-n-p-n -like Structure Subjected to dv/dt Ramps", IEEE EDL, Vol.EDL-9, p.197-199, May 1988
    • (1988) IEEE EDL , vol.EDL-9 , pp. 197-199
    • Silard, A.P.1
  • 4
    • 0022665463 scopus 로고    scopus 로고
    • Lateral Insulated Gate Transistors with Improved Latching Characteristics
    • Feb. 198
    • A.L.Robinson, et al., "Lateral Insulated Gate Transistors with Improved Latching Characteristics", IEEE EDL, Vol. EDL-7, p.61-63, Feb. 198
    • IEEE EDL , vol.EDL-7 , pp. 61-63
    • Robinson, A.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.