Lateral Insulated Gate Transistors with Improved Latching Characteristics

IEEE Electron Device Letters

Volumn 7, Issue 2, 1986, Pages 61-63

  Pattanayak, Deva N ^b   Adler, Michael S ^b   Baliga, B Jayant ^b   Wildi, Eric J ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

LATCHING CHARACTERISTICS; LATERAL INSULATED GATE TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0022665463     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26294     Document Type: Article

References (9)

1. B. J. Baliga, et al., “The insulated gate rectifier (IGR): A new power switching device,” in IEDM Tech. Dig., 1982, p. 264.
2. J. P. Russell et al., “The COMFET—A new high conductance MOS-gated device,” IEEE Electron Dev. Lett., vol. EDL-4, no. 3, p. 63, 1983.
3. J. A. Appels and H. M. J. Vaes, “High voltage thin layer devices (RESURF devices),” in IEDM Tech. Dig., 1979, p. 238.
4. E. J. Wildi et al., “Modeling and process implementation of implanted RESURF type devices,” in IEDM Tech. Dig., 1982, p. 268.
5. M. Darwish and K. Board, “Lateral resurfed COMFET,” Electron. Lett., vol. 20, p. 520, 1984.
6. R. Jayaraman et al., “Comparison of high voltage devices for power integrated circuits,” in IEDM Tech. Dig., 1984, p. 258.
7. D. N. Pattanayak and M. S. Adler, “Analysis of current flow in lateral insulated gate transistors,” presented at 43rd Annu. Dev. Res. Conf., (Boulder, CO), June 17–19, 1985, pap. 6B5.
8. V. Rumennik, “Power devices are in the chips,” IEEE Spectrum, p. 42, July 1985.
9. E. J. Wildi et al., “New high voltage IC technology,” in IEDM Tech. Dig., 1984, p. 262.