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Volumn 2, Issue , 2001, Pages 831-834

An IC chip of magneto-sensitive silicon transistors sensor

Author keywords

IC chip; magnetic sensitive transistor; poly silicon epitaxial; VMOS technology

Indexed keywords


EID: 84964447075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.982024     Document Type: Conference Paper
Times cited : (6)

References (12)
  • 1
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  • 2
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    • (1974) Appl. Phys. Lett. , vol.25 , pp. 590
    • Bartelink, D.J.1    Persky, G.2
  • 3
    • 36149014136 scopus 로고
    • Double Injection in Insulators
    • Lampert, M. A., Double Injection in Insulators, Phys.Rev., 125 126,1962
    • (1962) Phys.Rev. , vol.125 , pp. 126
    • Lampert, M.A.1
  • 5
    • 84916262811 scopus 로고
    • Properties of Manganese Recombination Centers in Germanium
    • Landsberg, E. G., and S. G. Kalashnikov, Properties of Manganese Recombination Centers in Germanium, sov. Sold start 5 777, 1963.
    • (1963) Sov. Sold Start , vol.5 , pp. 777
    • Landsberg, E.G.1    Kalashnikov, S.G.2
  • 6
    • 25644433787 scopus 로고
    • Recent development of magneto-resistive devices and applications
    • S. Kataota, "Recent development of magneto-resistive devices and applications," Circular Electrotech. Lab., no. 182.1974.
    • (1974) Circular Electrotech. Lab. , Issue.182
    • Kataota, S.1
  • 7
    • 0011213309 scopus 로고
    • Magneto-diode model
    • H. Pfleiderer, "Magneto-diode model" Solid-state Electron., vol. 15, pp 335-353, 1972.
    • (1972) Solid-state Electron , vol.15 , pp. 335-353
    • Pfleiderer, H.1
  • 8
    • 0029333356 scopus 로고
    • Modeling of split-drain magnetic field-effect transistor (MAG FET)
    • J. Lau. P. K. Ko, and P. C. H. Chan, "Modeling of split-drain magnetic field-effect transistor (MAG FET)," sens. Actuators A. vol. 49. pp. 155-162. 1995.
    • (1995) Sens. Actuators A , vol.49 , pp. 155-162
    • Lau, J.1    Ko, P.K.2    Chan, P.C.H.3
  • 9
    • 0032759591 scopus 로고    scopus 로고
    • An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factorG
    • January
    • Johannes W. A. von kluge and Werner A. Langheinrich, "An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factorG." IEEE Trans. Electron Devices, vol. 46. No.1. PP. 89-95. January 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.1 , pp. 89-95
    • Von Kluge, J.W.A.1    Langheinrich, W.A.2
  • 10
    • 0021483872 scopus 로고
    • The vertical Hall-effect device
    • R. Popovic, "The vertical Hall-effect device," IEEE Trans. Electron Device Lett., vol. EDL-5 pp. 357-358,1984.
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    • Popovic, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.