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Volumn 46, Issue 1, 1999, Pages 89-95

An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G

Author keywords

Geometric correction factor; MAGFET; Modeling

Indexed keywords

COMPUTATIONAL GEOMETRY; FUNCTIONS; MAGNETIC DEVICES; SEMICONDUCTOR DEVICE MODELS; SENSITIVITY ANALYSIS;

EID: 0032759591     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737446     Document Type: Article
Times cited : (56)

References (10)
  • 1
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    • Proc. IEEE
    • Baltes, H.P.1    Popovic, R.S.2
  • 4
    • 0022087133 scopus 로고    scopus 로고
    • Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology
    • 32, pp. 1212-1219, July 1985.
    • A. Nathan, A. J. Huiser, and H. P. Baltes, Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology, IEEE Trans. Electron Devices, Vol. ED32, pp. 1212-1219, July 1985.
    • IEEE Trans. Electron Devices, Vol. ED
    • Nathan, A.1    Huiser, A.J.2    Baltes, H.P.3
  • 5
    • 0029333356 scopus 로고    scopus 로고
    • Modeling of split-drain magnetic field-effect transistor (MAGFET)
    • vol. 49, pp. 155-162, 1995.
    • J. Lau, P. K. Ko, and P. C. H. Chan, Modeling of split-drain magnetic field-effect transistor (MAGFET), Sens. Actuators A, vol. 49, pp. 155-162, 1995.
    • Sens. Actuators a
    • Lau, J.1    Ko, P.K.2    Chan, P.C.H.3
  • 7
    • 0031169538 scopus 로고    scopus 로고
    • Measurement and modeling of sensitivity and noise of MOS magnetic field effect transistors
    • vol. 61, pp. 346-351, 1997.
    • D. Killat, J. v. Kluge, F. Umbach, W. Langheinrich, and R. Schmilz, Measurement and modeling of sensitivity and noise of MOS magnetic field effect transistors, Sens. Actuators A, vol. 61, pp. 346-351, 1997.
    • Sens. Actuators a
    • Killat, D.1    V Kluge, J.2    Umbach, F.3    Langheinrich, W.4    Schmilz, R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.