Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealing

Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Volumn , Issue , 2002, Pages 35-36

  Kurobe, K ^a   Ishikawa, Y ^a   Kagawa, K ^b   Niwatsukino, Y ^b   Matusno, A ^b   Shibahara, K ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b KOMATSU LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84963535756     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2002.1225194     Document Type: Conference Paper

References (4)

1. T. Yamamoto, K. Goto, Y. Tada, Y. Kikuchi, T. Kubo, Y. Wang, S. Talwar, M. Kase and T. Sugii: 2002 Symp. on VLSI Tech. Digest, (2002) pp. 138-139.
2. A. Matsuno, K. Kagawa, Y. Niwatsukino, T. Nire and K. Shibahara: 2002 Int. Semiconductor Tech. Conf. Abst., (2002) No.64.
3. H. Tsukamoto and T. Suzuki: Solid-State Electron. Vol. 42 (1998) pp. 28-34.
4. K. Shibahara, Y. Ishikawa, D. Onimatsu, N. Maeda, A. Mineji, K. Kagawa, A. Matsuno and T. Nire: Ext. Abst. 2001 Int. Conf. Solid State Devices and Mat., (2001) pp. 236-237.