Trench and via filling profile simulations for copper electroplating process

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 34-36

  Kobayashi, K ^a   Sano, A ^a   Akahoshi, H ^a   Itabashi, T ^a   Haba, T ^a   Fukada, S ^a   Miyazaki, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTROPLATING; FILLING; PHYSICAL PROPERTIES; SURFACE REACTIONS;

COPPER ELECTROPLATING; CU ELECTROPLATING; CU FILMS; PROFILE SIMULATIONS; SEED LAYER; SUBMICRON SCALE; VIA FILLING;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84962886793     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854273     Document Type: Conference Paper

References (5)

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5. K. Kobayashi, H. Ietomi, K. Kato, "Proceedings of 1996 Dry Process Symposium", pp.99-104.