Development of the 2nd generation SVCS using IEGT

Proceedings of the Power Conversion Conference-Osaka 2002, PCC-Osaka 2002

Volumn 3, Issue , 2002, Pages 1112-1117

  Tobita, M ^a   Kanai, T ^a   Yoshino, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

IEGT; IEGT converter; SVCS

Indexed keywords

DAMPING; METALS; OXIDE SEMICONDUCTORS; POWER CONVERTERS; POWER SEMICONDUCTOR DEVICES; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DEVICES; VALUE ENGINEERING;

GATE TRANSISTORS; IEGT; IEGT-CONVERTER; METAL OXIDES; SEMICONDUCTOR COMPANIES; SEMICONDUCTOR POWER DEVICES; SVCS; TURN OFFS;

STATIC VAR COMPENSATORS;

EID: 84961911771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PCC.2002.998128     Document Type: Conference Paper

References (5)

1. I.Omura, T.Ogura, K.Sugiyama and H.Ohashi, "Carrier Injection enhancement effect of high voltage MOS devices -Device physics and design concept-", 1997 IEEE
2. Hironobu Kon, Kazuya Nakayama, Satosi Yanagisawa, Junichi Miwa and Yosinari Uetake, "The 4500V-750A Planar Gate Press Pack IEGT", Proceedings of 1998 International Symposium on Power Semiconductor Devices & Ics, Kyoto
3. Mitsuhiko Kitagawa, Shigeru Hasegawa, Tomoki Inoue, Akihiro Yahata, Hiromichi Ohashi "4.5kV Injection Enhanced Gate Transistor: Experimental Verification of the Electrical Characteristics" Jpn. J. Appl. Phys, Vol.36(1997) Pt.1, No.6A
4. Masayuki Tobita, Ryoichi Kushibiki "Development of New High Power Converter Using IEGT" IPEC-Tokyo 2000.
5. Tatsuhiko Nakajima, Tomotsugu Ishizuka "Development of IEGT Series and Parallel Connection Technology for high Power Converters" IPEC-Tokyo 2000