4.5 kV injection enhanced gate transistor: Experimental verification of the electrical characteristics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3433-3437

  Kitagawa, Mitsuhiko ^a   Hasegawa, Shigeru ^a   Inoue, Tomoki ^a   Yahata, Akihiro ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

High power; IEGT; IGBT; Injection enhancement; Insulated gate; MOS; Power device; Self clamped anode voltage; Semiconductor; Transistor; Trench gate

Indexed keywords

GATE TURN OFF THYRISTOR; INJECTION ENHANCED GATE TRANSISTOR; SELF CLAMPED ANODE VOLTAGE; TRENCH GATE; VOLTAGE DROP;

ELECTRIC CURRENTS; PERFORMANCE; POWER ELECTRONICS; SWITCHING CIRCUITS; VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 0031167548     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3433     Document Type: Article

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