Properties of self-assembled ZnO nanostructures on Si and SiO2 wafers

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 454-457

  Ali, H A ^a   Iliadis, A A ^a   Von Cresce, A ^b   Kofinas, P ^b   Lee, U ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMERS; CHEMICAL INDUSTRY; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALS; MICROPHASE SEPARATION; NANOCLUSTERS; NANOPARTICLES; POLYMERS; REACTIVE ION ETCHING; SELF ASSEMBLY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON; SPHERES; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

FOURIER TRANSFORM INFRARED; INORGANIC NANOPARTICLE; NARROW SIZE DISTRIBUTIONS; PHOTOLITHOGRAPHIC PATTERNING; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR MANUFACTURING; SPHERICAL MORPHOLOGIES; WET CHEMICAL PROCESSING;

SILICON WAFERS;

EID: 84961830118     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984543     Document Type: Conference Paper

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