Electrical isolation of n-GaAs by proton implantation - Effects of doping implant, isolation implant and implant temperature

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 60-63

  Ahmed, S ^a   Sealy, B J ^a   Gwilliam, R ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Gallium Arsenide; Hot implantation; Isolation

Indexed keywords

CARRIER CONCENTRATION; III-V SEMICONDUCTORS; ION IMPLANTATION; IONS; LIGHT EMITTING DIODES; PROTON IRRADIATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES;

ELECTRICAL ISOLATION; HOT IMPLANTATION; ISOLATION; LIQUID NITROGEN TEMPERATURE; POST-IMPLANT ANNEALING; SEMI-INSULATING GAAS; SHEET CARRIER CONCENTRATION; SUBSTRATE TEMPERATURE;

GALLIUM ARSENIDE;

EID: 84961309416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257938     Document Type: Conference Paper

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