Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film

ACS Applied Materials and Interfaces

Volumn 8, Issue 8, 2016, Pages 5280-5289

  Ye, Lijuan ^a   Wang, Dan ^b   Chen, Shijian ^a  

^a CHONGQING UNIVERSITY   (China)

^b JILIN ENGINEERING NORMAL UNIVERSITY   (China)

Author keywords

film; MoS2; p n heterojunction; photoelectrochemical; S doped g C3N4

Indexed keywords

CARBON; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTROMAGNETIC WAVE ABSORPTION; FILM GROWTH; FILMS; HETEROJUNCTIONS; HYDROTHERMAL SYNTHESIS; INDIUM; INTERFACES (MATERIALS); ITO GLASS; LIGHT; LIGHT ABSORPTION; MOLYBDENUM COMPOUNDS; OXIDE FILMS; PHOTOELECTROCHEMICAL CELLS; SILVER; SUBSTRATES; TIN OXIDES;

INDIUM-TIN-OXIDE GLASS SUBSTRATES; P-N HETEROJUNCTIONS; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOELECTROCHEMICALS; PHOTOGENERATED CHARGE; S-DOPED; VISIBLE-LIGHT IRRADIATION; VISIBLE-LIGHT RESPONSE;

FILM PREPARATION;

EID: 84959500610     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b11326     Document Type: Article

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