Influence of sidewall roughness on the reliability of 0.20-μm Al RIE wiring

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 146-148

  Ravikumar, R ^a   Cichy, H ^a   Filippi, R G ^b   Kiewra, E W ^b   Rath, D L ^c   Stojakovic, G ^a  

^a Siemens Microelectronics Inc   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; INTEGRATED CIRCUIT INTERCONNECTS; RANDOM ACCESS STORAGE; RELIABILITY;

BACK END OF LINES; DYNAMIC RANDOM ACCESS MEMORY; ELECTRICAL PERFORMANCE; METAL ETCH; PERFORMANCE AND RELIABILITIES; SEMI-CONDUCTOR FABRICATION; SIDEWALL PROFILES; SIDEWALL ROUGHNESS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84954408764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787104     Document Type: Conference Paper

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