Capacitance-voltage characteristics of floating gate electrolyte-insulator-semiconductor capacitors

21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

Volumn , Issue , 2000, Pages 61-64

  Jakobson, G C ^a   Sudakov Boreysha, L ^a   Feinsod, M ^a   Dinar, U ^a   Nemirovsky, Y ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITORS; ELECTROLYTES; ELECTROLYTIC CAPACITORS; HYSTERESIS; NITRIDES; OXIDES; RECONFIGURABLE HARDWARE; SEMICONDUCTING SILICON; SILICON NITRIDE;

CAPACITANCE VOLTAGE CHARACTERISTIC; COUNTER-CLOCKWISE; ELECTROLYTE INSULATOR SEMICONDUCTORS; HIGH FREQUENCY CHARACTERISTICS; LARGE HYSTERESIS; PECVD SILICON NITRIDE; SUBSTRATE CHARACTERISTICS; THERMAL COEFFICIENT OF EXPANSION;

CAPACITANCE;

EID: 84953405537     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EEEI.2000.924320     Document Type: Conference Paper

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