Chemoresistive properties of photo-activated thin and thick ZnO films

Sensors and Actuators, B: Chemical

Volumn 222, Issue , 2016, Pages 1251-1256

  Fabbri, B ^a,c   Gaiardo, A ^a,e   Giberti, A ^a,b   Guidi, V ^a,b,c   Malagu C ^a,c   Martucci, A ^d   Sturaro, M ^d   Zonta, G ^a   Gherardi, S ^a   Bernardoni, P ^a  

^a UNIVERSITY OF FERRARA   (Italy)

^b MIST E R SCRL   (Italy)

^c ISTITUTO NAZIONALE DI OTTICA   (Italy)

^d UNIVERSITY OF PADOVA   (Italy)

^e FONDAZIONE BRUNO KESSLER   (Italy)

Author keywords

Photo activation; Room temperature; Thick films; Thin films; ZnO

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CHEMICAL ACTIVATION; CHEMICAL DETECTION; CHEMICAL SENSORS; ELECTROMAGNETIC WAVES; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; LIGHT EMITTING DIODES; NITROGEN OXIDES; SCREEN PRINTING; SOL-GELS; THICK FILMS; THIN FILMS; ZINC; ZINC OXIDE;

CHEMORESISTIVE PROPERTIES; MORPHOLOGICAL CHARACTERIZATION; PHOTO ACTIVATIONS; ROOM TEMPERATURE; ROOM-TEMPERATURE OPERATION; SCREEN PRINTING TECHNIQUE; WIDE-GAP SEMICONDUCTOR; ZNO;

NITROGEN;

EID: 84952975758     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2015.06.048     Document Type: Article

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